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SI5856DC_08 Datasheet, PDF (6/7 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode | |||
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Si5856DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
600
500
400
300
200
100
2
1
Duty Cycle = 0.5
0
0
4
8
12
16
20
VKA â Reverse Voltage (V
Normalized Thermal Transient Impedance, Junction-to-Ambient
SCHOTTKY
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10â2
10â1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10â4
10â3
10â2
10â1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72234.
www.vishay.com
6
Document Number: 72234
S-50366âRev. C, 28-Feb-05
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