SI5856DC_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5856DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
R_thJA
R_thJF
Typical
50
54
90
95
30
30
Maximum
60
65
110
115
40
40
Unit
_C/W
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 85_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 4.4 A
V_GS = 2.5 V, I_D = 4.1 A
V_GS = 1.8 V, I_D = 1.9 A
V_DS = 10 V, I_D = 4.4 A
I_S = 1.0 A, V_GS = 0 V
0.4
1.0
V
"100
nA
1
5
mA
20
A
0.032
0.040
0.036
0.045
W
0.042
0.052
22
S
0.8
1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.4 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 0.9 A, di/dt = 100 A/ms
5
7.5
0.85
nC
1
20
30
36
55
30
45
ns
12
20
45
90
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
V_F
Maximum Reverse Leakage Current
I_rm
Junction Capacitance
C_T
I_F = 1.0
I_F = 1.0, T_J = 125_C
V_r = 20 V
V_r = 20 V, T_J = 85_C
V_r = 20 V, T_J = 125_C
V_r = 10 V
Typ
0.34
0.255
0.05
2
10
90
Max
0.375
0.290
0.500
20
100
Unit
V
mA
pF
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Document Number: 72234
S-50366—Rev. C, 28-Feb-05