SI5856DC_08 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

Si5856DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Output Characteristics
20
V_GS = 5 thru 2 V
16
12
1.5 V
8
Transfer Characteristics
20
T_C = −55_C
16
25_C
12
125_C
8
4
0
0
0.10
1V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 4.4 A
4
4
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS − Gate-to-Source Voltage (V)
Capacitance
800
700
600
C_iss
500
400
300
200
100
C_rss
0
0
4
C_oss
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 4.4 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
6
Q_g − Total Gate Charge (nC)
Document Number: 72234
S-50366—Rev. C, 28-Feb-05
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
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