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SI5856DC Datasheet, PDF (6/6 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode | |||
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Si5856DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
600
500
400
300
200
100
2
1
Duty Cycle = 0.5
0
0
4
8
12
16
20
VKA â Reverse Voltage (V
Normalized Thermal Transient Impedance, Junction-to-Ambient
SCHOTTKY
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10â2
10â1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 0.05
0.01
10â4
0.02
Single Pulse
10â3
www.vishay.com
6
10â2
10â1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72234
S-32420âRev. B, 24-Nov-03
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