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SI5856DC Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
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Si5856DC
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
50
54
90
95
30
30
Maximum
60
65
110
115
40
40
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
VDS = VGS, ID = 250 mA
0.4
IGSS
VDS = 0 V, VGS = "8 V
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
ID(on)
VDS w 5 V, VGS = 4.5 V
20
VGS = 4.5 V, ID = 4.4 A
rDS(on)
VGS = 2.5 V, ID = 4.1 A
VGS = 1.8 V, ID = 1.9 A
gfs
VDS = 10 V, ID = 4.4 A
VSD
IS = 1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
Typ
0.032
0.036
0.042
22
0.8
5
0.85
1
20
36
30
12
45
Max Unit
1.0
V
"100
nA
1
mA
5
A
0.040
0.045
W
0.052
S
1.2
V
7.5
nC
30
55
45
ns
20
90
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
IF = 1.0
IF = 1.0, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 85_C
Vr = 20 V, TJ = 125_C
Vr = 10 V
Typ
0.34
0.255
0.05
2
10
90
Max
0.375
0.290
0.500
20
100
Unit
V
mA
pF
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Document Number: 72234
S-32420—Rev. B, 24-Nov-03
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