SI5856DC Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

New Product
Si5856DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1
0.1 _0.05
0.02
0.01
10^−4
Single Pulse
10^−3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^−4
10^−3
10^−2
10^−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
100
10
10
1
0.1
20 V
1
10 V
0.01
0.001
1
10
SCHOTTKY
Forward Voltage Drop
T_J = 150_C
T_J = 25_C
0.0001
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
Document Number: 72234
S-32420—Rev. B, 24-Nov-03
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F − Forward Voltage Drop (V)
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