SI5855DC-T1-E3 Datasheet, PDF (6/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

Si5855DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
600
500
400
300
200
100
2
1
Duty Cycle = 0.5
0
0
4
8
12
16
20
V_KA - Reverse Voltage (V)
Capacitance
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 95 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72232.
www.vishay.com
6
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10