SI5855DC-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

Si5855DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.4
0.3
T_J = 150 °C
0.2
T_J = 25 °C
0.1
I_D = 2.7 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 250 µA
0.2
0.1
0.0
- 0.1
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
10^-4 10^-3
10^-2 10^-1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
P(t) = 0.001
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10