SI5855DC-T1-E3 Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 1.8 V (G-S) MOSFET with Schottky Diode

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si5855DC
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 90 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
10
1
0.1
0.01
0.001
20 V
10 V
T_J = 150 °C
1
T_J = 25 °C
0.0001
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
Document Number: 72232
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
5