SI5504DC Datasheet, PDF (6/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Gate Charge
10
V_DS = 15 V
I_D = 2.1 A
8
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 2.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.4
T_J = 150_C
T_J = 25_C
0.3
I_D = 2.1 A
0.2
0.1
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
0.0
-0.2
-0.4
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
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2-6
0.0
0
50
40
30
20
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
10
0
10^{- 4} 10^{- 3}
10^{- 2} 10^{- 1}
1
Time (sec)
10 100 600
Document Number: 71056
S-21251—Rev. B, 05-Aug-02