SI5504DC Datasheet, PDF (5/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
N−CHANNEL
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 10 thru 7 V
6V
8
5V
8
6
6
4
4V
4
1
10
P−CHANNEL
Transfer Characteristics
T_C = -55_C
25_C
125_C
2
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.4
V_GS = 4.5 V
0.3
0.2
V_GS = 10 V
0.1
0.0
0
2
4
6
8
10
I_D - Drain Current (A)
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
2
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Capacitance
400
320
C_iss
240
160
C_oss
80
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
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