SI5504DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
T_J = 150_C
0.15
I_D = 2.9 A
0.10
1
0.00
T_J = 25_C
0.2 0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.05
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 mA
-0.0
-0.2
-0.4
-0.6
Single Pulse Power
50
40
30
20
10
-0.8
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10^{- 4} 10^{- 3}
10^{- 2} 10^{- 1}
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
2-4
Document Number: 71056
S-21251—Rev. B, 05-Aug-02