SI4501DY Datasheet, PDF (6/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4501DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PCHANNEL
Gate Charge
5
V_DS = 4 V
4
I_D = 5.6 A
On-Resistance vs. Junction Temperature
1.50
V_GS = 4.5 V
I_D = 5.6 A
1.25
3
2
1.00
1
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
20
Source-Drain Diode Forward Voltage
10
T_J = 150_C
T_J = 25_C
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.75
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
0.08
I_D = 5.6 A
0.04
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power, Juncion-To-Ambient
80
60
0.2
I_D = 250 mA
40
0.0
20
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
www.vishay.com
2-6
0
0.001
0.01
0.1
1
10
Time (sec)
Document Number: 70934
S-61812—Rev. B, 19-Jul-99