SI4501DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4501DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NCHANNEL
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
I_D = 4.5 A
0.06
T_J = 25_C
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
50
40
30
20
10
0
0.01
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
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2-4
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 73_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 70934
S-61812—Rev. B, 19-Jul-99