SI4501DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

New Product
Si4501DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 4 V
40
40
NCHANNEL
Transfer Characteristics
30
30
20
3V
10
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 11 A
8
6
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
20
T_C = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
1800
Capacitance
1500
C_iss
1200
900
600
C_oss
300
0
0
C_rss
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 11 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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2-3