SD203NR Datasheet, PDF (6/10 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 200 A

SD203N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 200 A
100
I _FM = 750 A
90
Square Pulse
400 A
80
70
200 A
60
50
40
30
SD203N/ R..S10 Series
T_J= 125 °C, Vr = 30V
20
20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics
3.6
SD203N/ R..S15 Series
T_J= 125 °C, V _r = 30V
3.2
I _FM= 750 A
2.8
Sq uare Pulse
2.4
400 A
2
200 A
1.6
10
100
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Time Characteristics
130
120
I _FM = 750 A
Square Pulse
110
100
90
400 A
80
70
200 A
60
50
40
30
SD203N/ R..S15 Series
T_J= 125 °C, Vr = 30V
20
10
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 15 - Recovery Current Characteristics
3.6
SD203N/ R..S20 Series
3.4
T_J= 125 °C, Vr = 30V
3.2
I_FM = 750 A
Square Pulse
3
400 A
200 A
2.8
2.6
2.4
10
100
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Fig. 16 - Recovery Time Characteristics
170
160
I _FM = 750 A
Squa re Pulse
150
140
130
120
400 A
110
100
200 A
90
80
70
SD203N/ R..S15 Series
60
T_J= 125 °C, Vr = 30V
50
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 14 - Recovery Charge Characteristics
300
I _FM = 750 A
Sq ua re Pulse
250
200
400 A
150
200 A
100
SD203N/ R..S20 Series
T_J= 125 °C, Vr = 30V
50
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 17 - Recovery Charge Characteristics
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Document Number: 93170
Revision: 08-Apr-08