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SD203NR Datasheet, PDF (3/10 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 200 A
Fast Recovery Diodes
(Stud Version), 200 A
SD203N/R Series
Vishay High Power Products
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C
trr AT 25 % IRRM
(µs)
TEST CONDITIONS
Ipk
SQUARE dI/dt
Vr
PULSE (A/µs) (V)
(A)
S10
1.0
S15
1.5
S20
2.0
750
25
- 30
TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
Qrr
Irr
(µs)
(µC)
(A)
2.4
52
33
2.9
90
44
3.2
107
46
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating
temperature range
TJ
Maximum storage temperature range TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Mounting torque ± 10 %
Not-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions (link at the end of datasheet)
VALUES
UNITS
- 40 to 125
°C
- 40 to 150
0.115
K/W
0.08
31
Nm
24.5
250
g
DO-205AB (DO-9)
ΔRthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
0.010
0.008
120°
0.013
0.014
90°
0.017
60°
0.025
0.019
0.027
TJ = TJ maximum
K/W
30°
0.044
0.044
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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