SD203NR Datasheet, PDF (2/10 Pages) Vishay Siliconix – Fast Recovery Diodes (Stud Version), 200 A

SD203N/R Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 200 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
SD203N/R..S10
08
10
12
SD203N/R..S15
14
16
20
SD203N/R..S20
25
V_RRM, MAXIMUM REPETITIVE V_RSM, MAXIMUM NON-REPETITIVE
PEAK AND OFF-STATE VOLTAGE
PEAK VOLTAGE
V
V
400
500
800
900
1000
1100
1200
1300
1400
1500
1600
1700
2000
2100
2500
2600
I_RRM MAXIMUM
T_J = 125 °C
mA
35
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV)
180° conduction, half sine wave
Maximum RMS current
Maximum peak, one-cycle
non-repetitive forward current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I_F(RMS)
I_FSM
I²t
I²âˆšt
V_F(TO)1
V_F(TO)2
r_f1
r_f2
V_FM
DC at 76 °C case temperature
t = 10 ms _{No voltage}
t = 8.3 ms ^reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms _{100 % VRRM}
t = 8.3 ms ^reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I_F(AV) < I < π x I_F(AV)),
T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
(16.7 % x π x I_F(AV) < I < π x I_F(AV)),
T_J = T_J maximum
(I > π x I_F(AV)), T_J = T_J maximum
I_pk = 628 A, T_J = 25 °C, t_p = 400 µs square pulse
VALUES
200
85
314
4990
5230
4200
4400
125
114
88
81
1250
1.00
1.47
1.10
0.46
1.65
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
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Document Number: 93170
Revision: 08-Apr-08