J175-E3 Datasheet, PDF (6/7 Pages) Vishay Siliconix – P-Channel JFETs

J/SST174/175/176/177 Series
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
174
175
176
177
V_DD
–10 V
V_GG
20 V
R_L*
560 W
R_G*
100 W
I_D(on)
–15 mA
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
–6 V
12 V
750 W
220 W
–7 mA
–6 V
8V
1800 W
390 W
–3 mA
–6 V
5V
5600 W
390 W
–1 mA
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
V_GG
V_DD
1.2 kW
R_L
V_GS(H)
V_GS(L)
0.1 mF
R_G
51 W
1.2 kW
51 W
Sampling
Scope
7.5 kW
51 W
www.vishay.com
9-6
Document Number: 70257
S-04030—Rev. E, 04-Jun-01