J175-E3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel JFETs

J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
–100
I_DSS
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
250
g_fs and g_os @ V_DS = –15 V
V_GS = 0 V, f = 1 kHz
160
–80
15
200
r_DS
120
g_fs
–60
12
150
g_os
80
–40
9
100
40
0
0
–25
–20
r_DS @ I_D = –1 mA, V_GS = 0 V
I_DSS @ V_DS = –15 V, V_GS = 0 V
2
4
6
8
V_GS(off) – Gate-Source Cutoff Voltage (V)
–20
0
10
Output Characteristics
V_GS(off) = 3 V
V_GS = 0 V
0.5 V
–15
–10
–5
0
0
1.0 V
1.5 V
2.0 V
–4
–8
–12
–16
–20
V_DS – Drain-Source Voltage (V)
Output Characteristics
–2
–1.6
V_GS = 0 V
0.5 V
1.5 V
1.0 V
–1.2
2.0 V
–0.8
–0.4
0
0
V_GS(off) = 3 V
–0.1
–0.2
–0.3
–0.4
–0.5
V_DS – Drain-Source Voltage (V)
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9-4
6
50
3
0
2
4
0
6
8
10
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Drain Current
250
T_A = 25_C
200
V_GS(off) = 1.5 V
150
3V
100
5V
50
0
–1
–10
I_D – Drain Current (mA)
On-Resistance vs. Temperature
300
I_D = –1 mA
r_DS changes X 0.7%/_C
240
–100
180
V_GS(off) = 1.5 V
3V
120
5V
60
0
–55 –35 –15 5 25 45 65 85 105 125
T_A – Temperature (_C)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01