J175-E3 Datasheet, PDF (5/7 Pages) Vishay Siliconix – P-Channel JFETs

J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
50
t_r approximately independent of I_D
V_DD = –10 V, R_G = 220 W
V_GS(H) = 10 V, V_GS(L) = 0 V
40
Turn-Off Switching
20
t_f V_GS(off) = 1.5 V
16
5V
30 _{tON @ ID = –5 mA}
20
t_ON @ I_D = –10 mA
12
t_d(off) V_GS(off) = 1.5 V
8
5V
10
t_r @ I_D = –5 mA
0
0
1
2
3
4
5
V_GS(off) – Gate-Source Cutoff Voltage (V)
4
V_DD = –10 V, V_GS(H) = 10 V, V_GS(L) = 0 V
0
0
–3
–6
–9
–12
–15
I_D – Drain Current (mA)
Capacitance vs. Gate-Source Voltage
30
V_DS = 0 V
f = 1 MHz
24
18
C_iss
12
C_rss
6
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
T_A = 125_C
I_D = –1 mA
–10 mA
I_GSS @ 125_C
T_A = 25_C
–10 mA
–1 mA
I_GSS @ 25_C
0
0
4
8
12
16
20
V_GS – Gate-Source Voltage (V)
0.1 pA
0
–10
–20
–30
–40
–50
V_DG – Drain-Gate Voltage (V)
Transfer Characteristics
–40
V_GS(off) = 3 V
–32
V_DS = –15 V
Noise Voltage vs. Frequency
100
I_D = –0.1 mA
–24
T_A = –55_C
–16
25_C
–1 mA
10
–8
125_C
0
0
1
2
3
4
5
V_GS – Gate-Source Voltage (V)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
V_DS = –10 V
1
10
100
1k
10 k
f – Frequency (Hz)
100 k
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