IRFBC30AS Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
400
ID
TOP
1.6A
2.3A
BOTTOM 3.6A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
740
720
700
680
660
640
0.0
1.0
2.0
3.0
4.0
IA_V , Avalanche Current ( A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanache Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91109
S-81412-Rev. A, 07-Jul-08