IRFBC30AS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
23
5.4
11
Single
I²PAK (TO-262) D²PAK (TO-263)
2.2
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRFBC30ASPbF
SiHFBC30AS-E3
SnPb
IRFBC30AS
SiHFBC30AS
Note
a. See device orientation.
D²PAK (TO-263)
IRFBC30ASTRLPbF^a
SiHFBC30ASTL-E3^a
IRFBC30ASTRL^a
SiHFBC30ASTL^a
D²PAK (TO-263)
IRFBC30ASTRRPbF^a
SiHFBC30ASTR-E3^a
IRFBC30ASTRR^a
SiHFBC30ASTR^a
I²PAK (TO-262)
IRFBC30ALPbF
SiHFBC30AL-E3
IRFBC30AL
SiHFBC30AL
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 46 mH, R_G = 25 Ω, I_AS = 3.6 A (see fig. 12).
c. I_SD ≤ 3.6 A, dI/dt ≤ 170 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
600
± 30
3.6
2.3
14
0.69
290
3.6
7.4
74
7.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
www.vishay.com
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