IRFBC30AS Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A)

IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
10000
1000
100
V_GS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
T_J = 150° C
T_J = 25° C
1
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 3.6A
16
12
V_DS = 480V
V_DS = 300V
V_DS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
10us
100us
1
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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4
Document Number: 91109
S-81412-Rev. A, 07-Jul-08