IRF9Z10 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9Z10, SiHF9Z10
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
500
I_D
Top - 2.7 A
400
- 4.7 A
Bottom - 6.7 A
300
200
100
0 ^{VDD = - 25 V}
25
50
75
100 125 150 175
90118_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000