IRF9Z10 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF9Z10, SiHF9Z10
Vishay Siliconix
600
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
480
C_rss = C_gd
C_oss = C_ds + C_gd
360
C_iss
240
C_oss
120
0
10⁰
90118_05
C_rss
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
175 °C
10⁰
25 °C
10^-1
1.0
90118_07
V_GS = 0 V
2.0
3.0
4.0
5.0
6.0
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = - 6.7 A}
16
12
V_DS = - 48 V
V_DS = - 30 V
8
4
0
0
90118_06
For test circuit
see figure 13
3
6
9
12
15
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10²
Operation in this area limited
5
by R_DS(on)
10 µs
2
100 µs
10
5
1 ms
2
1
1
90118_08
T_C = 25 °C
T_J = 175 °C
Single Pulse
10 ms
2
5
10
2
5
10²
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000