IRF9Z10 Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9Z10, SiHF9Z10
Vishay Siliconix
V_GS
Top - 15 V
- 10 V
10¹
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
10⁰
10^-1
10^-1
90118_01
- 4.5 V
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
10¹
25 °C
175 °C
10⁰
10^-1
4
90118_03
20 µs Pulse Width
V_DS = - 25 V
5
6
7
8
9
10
- V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
V_GS
Top - 15 V
10¹
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
10⁰
- 4.5 V
10^-1
10^-1
90118_02
20 µs Pulse Width
T_C = 175 °C
10⁰
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 175 ° C
3.0
I_D = - 6.7 A
V_GS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
90118_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000