IRF9530 Datasheet, PDF (6/8 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

IRF9530, SiHF9530
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T
I_AS
0.01 Ω
-
+
V
DD
A
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91076
S-81272-Rev. A, 16-Jun-08