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IRF9530 Datasheet, PDF (2/8 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS
◁
IRF9530, SiHF9530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 100 V, VGS = 0 V
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 7.2 Ab
VDS = - 50 V, ID = - 7.2 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 12 A, VDS = - 80 V,
see fig. 6 and 13b
VDD = - 50 V, ID = - 12 A,
RG = 12 Ω,RD = 3.9 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
- 100
-
- 2.0
-
-
-
-
3.7
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.10
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.30
-
V
V/°C
V
nA
µA
Ω
S
860
-
340
-
pF
93
-
-
38
-
6.8
nC
-
21
12
-
52
-
ns
31
-
39
-
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 12
A
-
-
- 48
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 12 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 12 A, dI/dt = 100 A/µsb
120
240
ns
Qrr
-
0.46 0.92 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91076
S-81272-Rev. A, 16-Jun-08
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