IRF9530 Datasheet, PDF (5/8 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9530, SiHF9530
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91076
S-81272-Rev. A, 16-Jun-08
www.vishay.com
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