IRF9520S Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF9520S, SiHF9520S
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
1000
800
600
I_D
Top - 2.8 A
- 4.8 A
Bottom - 6.8 A
400
200
0 ^{VDD = - 25 V}
25
50
75
100 125
150 175
91075_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91075
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000