IRF9520S Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF9520S, SiHF9520S
Vishay Siliconix
900
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
750
C_rss = C_gd
C_oss = C_ds + C_gd
600
450
C_iss
300
C_oss
150
0
10⁰
91075_05
C_rss
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10¹
175 °C
10⁰
25 °C
10^-1
1.0
91075_07
V_GS = 0 V
2.0
3.0
4.0
5.0
- V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 _{ID = - 6.8 A}
V_DS = - 80 V
16
V_DS = - 50 V
V_DS = - 20 V
12
8
4
0
0
91075_06
For test circuit
see figure 13
4
8
12
16
20
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10³
Operation in this area limited
5
by R_DS(on)
2
10²
5
2
10
5
2
1
1
91075_08
100 µs
T_C = 25 °C
T_J = 175 °C
Single Pulse
1 ms
10 ms
2
5 ₁₀ 2
5 ₁₀₂ 2
5 ₁₀₃
- V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91075
S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000