IRF9520S Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9520S, SiHF9520S
Vishay Siliconix
10¹
10⁰
10⁰
91075_01
V_GS
Top - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
20 µs Pulse Width
T_C = 25 °C
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
V_GS
Top _{- 15 V}
- 10 V
- 8.0 V
10¹
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
10⁰
10⁰
91075_02
20 µs Pulse Width
T_C = 175 °C
10¹
- V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 175 °C
25 °C
10¹
175 °C
10⁰
4
91075_03
20 µs Pulse Width
V_DS = - 50 V
5
6
7
8
9
10
- V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
I_D = - 6.8 A
V_GS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
91075_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91075
S11-1050-Rev. C, 30-May-11
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3
This document is subject to change without notice.
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