IRF840A Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840A, SiHF840A
Vishay Siliconix
1200
1000
800
Top
Bottom
I_D
3.6 A
5.1 A
8.0 A
600
400
200
0
25
50
75
100
125
150
91065_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
600
580
560
540
520
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
91065_12d
I_AV, Avalanche Current (A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91065
S-81275-Rev. A, 16-Jun-08