IRF840A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840A, SiHF840A
Vishay Siliconix
10⁵
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds Shorted
10⁴
C_rss = C_gd
C_oss = C_ds + C_gd
10³
C_iss
10²
C_oss
10
C_rss
1
1
10
10²
10³
91065_05
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10²
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.2
91065_07
V_GS = 0 V
0.5
0.8
1.1
1.4
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I_D = 8.0 A
16
V_DS = 400 V
V_DS = 250 V
12
V_DS = 100 V
8
4
0
0
91065_06
For test circuit
see figure 13
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10²
Operation in this area limited
by R_DS(on)
10 µs
10
100 µs
1
0.1
10
91065_08
1 ms
10 ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
10²
10³
10⁴
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91065
S-81275-Rev. A, 16-Jun-08