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IRF840A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
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IRF840A, SiHF840A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
500
-
-
V
-
0.58
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.85
Ω
3.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
VGS = 0 V; VDS = 0 V to 400 Vc
-
VGS = 10 V
ID = 8 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 8 A
-
RG = 9.1 Ω, RD = 31 Ω, see fig. 10b
-
-
1018
-
155
-
8.0
-
pF
1490
42
56
-
38
-
9.0
nC
-
18
11
-
23
-
ns
26
-
19
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
8.0
A
-
-
32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
trr
-
422
633
ns
TJ = 25 °C, IF = 8 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge
Qrr
-
2.16 3.24 µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91065
S-81275-Rev. A, 16-Jun-08
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