IRF830 Datasheet, PDF (6/8 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830, SiHF830
Vishay Siliconix
600
I_D
Top 2.0 A
500
2.8 A
Bottom 4.5 A
400
300
200
100
V_DD = 50 V
0
25
50
75
100
125
150
91063_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91063
S-81290-Rev. A, 16-Jun-08