IRF830 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830, SiHF830
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10¹ _Top
V_GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10⁰ Bottom 4.5 V
4.5 V
10¹
150 °C
25 °C
10⁰
10^-1
91063_01
20 µs Pulse Width
T_C = 25 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
10^-1
4
91063_03
20 µs Pulse Width
V_DS = 50 V
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
Fig. 3 - Typical Transfer Characteristics
10¹ _Top
V_GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
10⁰ _{Bottom 4.5 V}
4.5 V
10^-1
91063_02
20 µs Pulse Width
T_C = 150 °C
10⁰
10¹
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
3.0
I_D = 3.1 A
2.5 ^{VGS = 10 V}
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91063_04
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91063
S-81290-Rev. A, 16-Jun-08
www.vishay.com
3