IRF830 Datasheet, PDF (5/8 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
91063_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF830, SiHF830
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
10
1 _{0 - 0.5}
0.2
0.1
0.1 ^0.05
0.02
0.01
10^-2
10^-5
91063_11
P_DM
Single Pulse
(Thermal Response)
10^-4
10^-3
10^-2
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
0.1
1
10
t₁, Rectangular Pulse Duration (S)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91063
S-81290-Rev. A, 16-Jun-08
V_DS
V_(BR)DSS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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