IRF820AS Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
300
ID
TOP
1.1A
250
1.6A
BOTTOM 2.5A
200
150
100
50
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
700
650
600
550
0.0
0.5
1.0
1.5
2.0
2.5
IAV , Avalanche Current ( A)
Fig. 12d - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91058
S-Pending-Rev. A, 02-Jun-08