IRF820AS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Max.) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
17
4.3
8.5
Single
3.0
D
I²PAK
(TO-262)
D²PAK
(TO-263)
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
D²PAK (TO-263)
IRF820ASPbF
SiHF820AS-E3
IRF820AS
SiHF820AS
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt _RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C_oss specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
I²PAK (TO-262)
IRF820ALPbF
SiHF820AL-E3
IRF820AL
SiHF820AL
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^{a, e}
Linear Derating Factor
Avalanche Current^a
Single Pulse Avalanche Energy^{b, e}
Avalanche Current^a
Repetiitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
I_AR
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 45 mH, R_G = 25 Ω, I_AS = 2.5 A (see fig. 12).
c. I_SD ≤ 2.5 A, dI/dt ≤ 270 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF820A/SiHF820A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91058
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
LIMIT
500
± 30
2.5
1.6
10
0.4
10
140
2.5
5.0
50
3.4
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
A
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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