IRF820AS Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS
10
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
1
T_J = 150° C
0.1
4.5V
T_J = 25° C
0.1
0.01
0.1
20μs PULSE WIDTH
TJ= 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.01
4.0
V _DS= 50V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V_GS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
1
20μs PULSE WIDTH
TJ= 150 °C
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 _{ID = 2.5A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91058
S-Pending-Rev. A, 02-Jun-08
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