IRF820A Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

IRF820A, SiHF820A
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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6
Document Number: 91057
S-Pending-Rev. A, 19-Jun-08