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IRF820A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)
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IRF820A, SiHF820A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ab
500
-
-
V
-
0.60
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
3.0
Ω
1.4
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V; VDS = 400 V, f = 1.0 MHz
VGS = 0 V; VDS = 0 V to 400 Vc
-
VGS = 10 V
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 2.5 A,
-
RG = 21 Ω, RD = 97 Ω, see fig. 10b
-
-
340
-
53
-
2.7
-
pF
490
15
28
-
17
-
4.3
nC
-
8.5
8.1
-
12
-
ns
16
-
13
-
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
-
-
2.5
A
-
-
10
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
-
-
1.6
V
trr
-
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/µsb
330
500
ns
Qrr
-
760 1140 nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91057
S-Pending-Rev. A, 19-Jun-08
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