IRF820A Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Power MOSFET
IRF820A, SiHF820A
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
3.0
17
4.3
8.5
Single
D
TO-220
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half bridge
• Full bridge
TO-220
IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 45 mH, R_G = 25 Ω, I_AS = 2.5 A (see fig. 12).
c. I_SD ≤ 2.5 A, dI/dt ≤ 270 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91057
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
LIMIT
500
± 30
2.5
1.6
10
0.40
140
2.5
5.0
50
3.4
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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