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2N4416 Datasheet, PDF (6/7 Pages) Calogic, LLC – N-Channel JFET High Frequency Amplifier
2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
10
TA = 25_C
VDS = 15 V
VGS = 0 V
−brs
Common Source
Output Admittance
10
bos
1
1
gos
−grs
0.1
0.01
100
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
200
500
f − Frequency (MHz)
1000
Gate Leakage Current
IG @ ID = 5 mA
1 mA
TA = 125_C
0.1 mA
5 mA
TA = 25_C
IGSS
@
125_C
1 mA
0.1 mA
IGSS @ 25_C
0.1
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
0.01
100
10
8
200
500
f − Frequency (MHz)
1000
Common-Source Forward
Transconductance vs. Drain Current
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
6
TA = −55_C
25_C
4
125_C
2
0.1 pA
0
4
8
12
16
20
VDG − Drain-Gate Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
12
0
0.1
1
10
ID − Drain Current (mA)
Output Conductance vs. Drain Current
20
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
16
TA = −55_C
12
25_C
8
8
ID = 5 mA
4
VGS = 0 V
125_C
4
0
10
100
1k
10 k
f − Frequency (Hz)
100 k
0
0.1
1
10
ID − Drain Current (mA)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.
www.vishay.com
6
Document Number: 70242
S-50147—Rev. H, 24-Jan-05