2N4416 Datasheet, PDF (2/7 Pages) Calogic, LLC – N-Channel JFET High Frequency Amplifier

2N4416/2N4416A/SST4416
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N/SST4416) . . . . . . . . . . . . . . . . . . . . . −30 V
(2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . −35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . −65 to 200 _C
(SST Prefix) . . . . . . . . . . . . . . . . . −65 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150 _C
Power Dissipation :
(2N Prefix)^a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(SST Prefix)^b . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T_A = 25_C UNLESS NOTED)
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current^c
Drain-Source On-Resistance^c
Gate-Source
Forward Voltage^c
Dynamic
Common-Source
Forward Transconductance^b
Common-Source
Output Conductance^b
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage^c
Symbol
Test Conditions
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
I_D(off)
r_DS(on)
V_GS(F)
I_G = −1 mA , V_DS = 0 V
V_DS = 15 V, I_D = 1 nA
V_DS = 15 V, V_GS = 0 V
V_GS = −20 V, V_DS = 0 V (2N)
T_A = 150_C
V_GS = −15 V, V_DS = 0 V (SST)
T_A = 125_C
V_DG = 10 V, I_D = 1 mA
V_DS = 10 V, V_GS = −6 V
V_GS = 0 V, I_D = 300 mA
I_G = 1 mA , V_DS = 0 V
g_fs
g_os
C_iss
C_rss
C_oss
e_n
V_DS = 15 V, V_GS = 0 V
f = 1 kHz
V_DS = 15 V, V_GS = 0 V
f = 1 MHz
V_DS = 10 V, V_GS = 0 V
f = 1 kHz
Typ^a
2N4416
Min Max
Limits
2N4416A
Min Max
SST4416
Min Max
Unit
−36
−30
−35
−30
V
−3
−6 −2.5 −6
−6
10
5
15
5
15
5
15 mA
−2
−100
−100
pA
−4
−100
−100
−0.002
−1
nA
−0.6
−20
2
pA
150
W
0.7
V
6
4.5 7.5 4.5 7.5 4.5 7.5 mS
15
50
50
50
mS
2.2
4
4
0.7
0.8
0.8
pF
1
2
2
6
nV⁄
√Hz
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Document Number: 70242
S-50147—Rev. H, 24-Jan-05