2N4416 Datasheet, PDF (3/7 Pages) Calogic, LLC – N-Channel JFET High Frequency Amplifier

2N4416/2N4416A/SST4416
Vishay Siliconix
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (T_A = 25_C UNLESS NOTED)
Limits
100 MHz
400 MHz
Parameter
Symbol
Test Conditions
Min Max Min Max Unit
Common Source Input Conductance^d
Common Source Input Susceptance^d
Common Source Output Conductance^d
Common Source Output Susceptance^d
Common Source Forward Transconductance^d
Common-Source Power Gain^d
Noise Figure^d
g_iss
b_iss
g_oss
V_DS = 15 V, V_GS = 0 V
b_oss
g_fs
G_ps
V_DS = 15 V, I_D = 5 mA
NF
R_G = 1 kW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
100
1,000
2,500
10,000
75
100
mS
1,000
4,000
4,000
18
10
2
4
dB
NH
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
16
I_DSS
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
r_DS @ I_D = 300 mA, V_GS = 0 V
g_os @ VDS = 10 V, V_GS = 0 V
400
f = 1 kHz
80
12
g_fs
8
6
300
r_DS
60
g_os
4
200
40
4
0
0
10
8
6
4
2
0
0
I_DSS @ V_DS = 10 V, V_GS = 0 V
g_fs @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
−2
−4
−6
−8
V_GS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
2
0
−10
V_GS(off) = −2 V
V_GS = 0 V
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.2 V
−1.4 V
2
4
6
8
10
V_DS − Drain-Source Voltage (V)
100
20
0
0
15
12
9
6
3
0
0
−2
−4
−6
−8
V_GS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
V_GS(off) = −3 V
0
−10
V_GS = 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
2
4
6
8
10
V_DS − Drain-Source Voltage (V)
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
www.vishay.com
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