VS-VSK250PBF Datasheet, PDF (5/14 Pages) Vishay Siliconix – Standard Recovery Diodes

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
1200
1000
800
600
400
200
0
0
180°
(Sine )
180°
(Rec t)
0.10K.0/8WK/ _W
0.16 _K/W
0.25 _{K/ W}
2 x VSK.250.. Series
Single Phase Brid ge
Connec ted
T_J = 150°C
0.35 _{K/ W}
100 200 300 400
Total Output Current (A)
500 25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
1800
1600
1400
1200
1000
800
600
400
200
120°
(Rec t)
3 x VSK.250.. Series
Three Phase Brid ge
Connec ted
T_J = 150°C
0.00.806KK/ _W/ ^W
0.12 _{K/ W}
0.16 _{K/ W}
0.25 _{K/ W}
0.35 _K/W
0
0 100 200 300 400 500 600 700 800 25 50
75 100 125 150
Total Outp ut Current (A)
Maximum Allowab le Ambient Temp era ture (°C)
Fig. 7 - Forward Power Loss Characteristics
6500
6000
5500
5000
At Any Ra ted Loa d Cond ition And With
Rated V_RRM Ap p lied Following Surge.
Initia l T_J= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4500
4000
3500
3000
2500
2000
VSK.250.. Series
Per Junc tion
1500
1
10
100
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
7000
6500
6000
5500
5000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T_J= 150°C
No Voltage Reapp lied
Ra ted V _RRM Rea pplied
4500
4000
3500
3000
2500
2000
VSK.250.. Series
Per Junc tion
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 28-May-14
5
Document Number: 93581
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