VS-VSK250PBF Datasheet, PDF (3/14 Pages) Vishay Siliconix – Standard Recovery Diodes

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
VSK.250 VSK.270 VSK.320
Maximum junction operating and storage
temperature range
Maximum thermal resistance, 
junction to case per junction
Maximum resistance, case to heatsink 
per module
T_J, T_Stg
R_thJC
R_thCS
DC operation
Mounting surface flat, smooth and
greased
-40 to +150
°C
0.16
0.125
K/W
0.035
MAP to heatsink
A mounting compound is recommended
4 to 6
Mounting torque
and the torque should be rechecked 
± 10 %
busbar to MAP
after a period of about 3 hours to allow for
8 to 10
Nm
the spread of the compound.
Approximate weight
800
g
30
oz.
Case style
MAGN-A-PAK
R CONDUCTION PER JUNCTION
DEVICE
SINUSOIDAL CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
RECTANGULAR CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
UNITS
VSK.250
0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033
VSK.270
0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
K/W
VSK.320
0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
Revision: 28-May-14
3
Document Number: 93581
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000